The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy

Journal of Applied Physics

Volumn 80, Issue 12, 1996, Pages 6855-6860

  Dalfors, J ^a   Lundstrom T ^a   Holtz, P O ^a   Radamson, H H ^a   Monemar, B ^a   Wallin, J ^b   Landgren, G ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012837147     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363752     Document Type: Article

References (22)

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