High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal-organic chemical-vapor deposition

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Zhang, W ^a   Lim, H ^a   Taguchi, M ^a   Tsao, S ^a   Movaghar, B ^a   Razeghi, M ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT BLOCKING LAYER (CBL); PHOTORESPONSE; QUANTUM-DOT INFRARED PHOTODETECTORS (QDIP); SPECTRAL RESPONSE;

ATOMIC FORCE MICROSCOPY; BANDWIDTH; DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS;

INFRARED DETECTORS;

EID: 20844434962     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1923176     Document Type: Article

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