Linewidth roughness characterization in step and flash imprint lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Schmid, Gerard M ^a   Khusnatdinov, Niyaz ^a   Brooks, Cynthia B ^a   LaBrake, Dwayne ^a   Thompson, Ecron ^a   Resnick, Douglas J ^a  

^a MOLECULAR IMPRINTS INC   (United States)

Author keywords

Imprint lithography; Imprint mask; LER; Linewidth roughness; LWR; S FIL; Template

Indexed keywords

ARCHITECTURAL DESIGN; COMPUTER NETWORKS; ELECTRON BEAM LITHOGRAPHY; LAWS AND LEGISLATION; LIGHT WATER REACTORS; LINEWIDTH; PHOTORESISTORS; PHOTORESISTS; ROUGHNESS MEASUREMENT; SODIUM; TECHNOLOGY; TIMING CIRCUITS;

(2+1) DIMENSIONS; (E ,3E) PROCESS; (OTDR) TECHNOLOGY; CHEMICALLY AMPLIFIED RESISTS (CAR); CMOS CIRCUITS; DESIGN RULES; DEVICE SPEED; DOUBLE PATTERNING; FEATURE SIZES; HIGH FIDELITY; HIGH NA; IMPRINT LITHOGRAPHY (IL); LINE WIDTH ROUGHNESS (LWR); MASK TECHNOLOGY; NANOMETER-SCALE STRUCTURES; NEXT-GENERATION LITHOGRAPHY (NGL); OPTICAL LITHOGRAPHY; PATTERN TRANSFERRING; PATTERNED SUBSTRATES; PATTERNING PROCESSES; PHOTO MASKING; PROCESS THROUGHPUT; PROCESSING STEP; REPLICATION PROCESSES; ROAD MAPS; STEP-AND-FLASH IMPRINT LITHOGRAPHY (S-FIL); SUB-WAVELENGTH IMAGING; TEMPLATE FABRICATION; ZEP520A;

NANOIMPRINT LITHOGRAPHY;

EID: 45549103778     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.796015     Document Type: Conference Paper

References (15)

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