Modeling mask pellicle effects for OPC/RET

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Zavyalova, Lena ^a   Song, Hua ^a   Lucas, Kevin ^a   Zhang, Qiaolin ^a   Shiely, James ^a  

^a SYNOPSYS INC   (United States)

Author keywords

Critical dimension (CD); Lithography; Mask pellicle; Optical proximity correction (OPC); Resolution enhancement technology (RET)

Indexed keywords

BEHAVIORAL RESEARCH; CADMIUM; CADMIUM COMPOUNDS; COMPUTATIONAL METHODS; COMPUTER NETWORKS; COMPUTER SOFTWARE; FILM THICKNESS; LIGHT; LIGHT REFLECTION; LITHOGRAPHY; MATHEMATICAL MODELS; OPTICAL FILMS; OPTICS; POLARIZATION; SODIUM; TECHNOLOGY; THICK FILMS; THIN FILMS;

ERROR BUDGETING; HYPER-NA IMAGING; INCIDENT ANGLES; INTERFERENCE EFFECTS; JONES MATRICES; LITHOGRAPHY SIMULATIONS; MASK SYNTHESIS; MASK TECHNOLOGY; MODEL BASED (OPC); MODELING FRAMEWORK; MODELING SOFTWARES; NEXT-GENERATION LITHOGRAPHY (NGL); NORMAL INCIDENCE; NUMERICAL EXPERIMENTS; PHOTO MASKING; POLARIZATION STATE (PS); PROJECTION LENSES; PROPERTY (S); PUPIL PLANES; SYNOPSYS (CO); TECHNOLOGY NODES; THIN MEMBRANES; THIN-FILM OPTICS; TRANSMISSION DATA; TRANSMISSION LOSS (TL); VECTOR MODELING;

PHOTOACOUSTIC EFFECT;

EID: 45549097879     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793118     Document Type: Conference Paper

References (8)

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