Experimental study of ALD HfO2 deposited on strained Silicon-on-insulator (sSOI & xsSOI) and SOI

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 421-429

  Gu, D ^a,b   Tapily, K ^a,b   Shrestha, P ^a,b   Celler, G ^c   Baumgart, H ^a,b  

^a Old Dominion University   (United States)

^b THOMAS JEFFERSON NATIONAL ACCELERATOR FACILITY   (United States)

^c PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISSIPATION; HAFNIUM OXIDES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LOGIC GATES; NANOCRYSTALLINE MATERIALS; SILICATES; STRAINED SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

HRTEM IMAGES; LATTICE STRAIN; POLYCRYSTALLINE; POST DEPOSITION ANNEALING; SILICON-ON- INSULATORS (SOI); SOI THICKNESS; STRAINED-SOI; THICKNESS UNIFORMITY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 45549093916     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779578     Document Type: Conference Paper

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