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Volumn 25, Issue 1, 2007, Pages 86-90
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Interface chemical characterization of novel W/HfO2/GeON/Ge stacks
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Author keywords
[No Author keywords available]
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Indexed keywords
GERMANIUM COMPOUNDS;
HAFNIUM COMPOUNDS;
INTERFACES (MATERIALS);
LEAKAGE CURRENTS;
PASSIVATION;
X RAY PHOTOELECTRON SPECTROSCOPY;
HIGH ENERGY PHOTOEMISSION;
INTERFACIAL LAYERS;
METAL-OXIDE SEMICONDUCTOR TRANSISTORS;
MOS DEVICES;
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EID: 34047154071
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.2409960 Document Type: Article |
Times cited : (7)
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References (15)
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