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Volumn 6156, Issue , 2006, Pages

Patterning with spacer for expanding the resolution limit of current lithography tool

Author keywords

CMP; Double Exposure; Nitride Spacer; Nitride Strip

Indexed keywords

CONTROLLABILITY; ELECTRIC INSULATORS; ETCHING; FLASH MEMORY; INTERCONNECTION NETWORKS; LITHOGRAPHY; NITRIDES; PROBLEM SOLVING;

EID: 33745795739     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.650991     Document Type: Conference Paper
Times cited : (69)

References (1)
  • 1
    • 3843093751 scopus 로고    scopus 로고
    • Double exposure to reduce overall line width variation of 80nm DRAM gate
    • Won-Kwang Ma, "Double Exposure to Reduce Overall Line Width Variation of 80nm DRAM Gate" Proceedings of SPIE, Optical Microlithography SPIE, 5377(2004) pp.939-946
    • (2004) Proceedings of SPIE, Optical Microlithography SPIE , vol.5377 , pp. 939-946
    • Ma, W.-K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.