Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6252-6256

  Ono, Y ^a   Khalafalla, M A H ^a   Nishiguchi, K ^a   Takashina, K ^a   Fujiwara, A ^a   Horiguchi, S ^b   Inokawa, H ^c   Takahashi, Y ^d  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b AKITA UNIVERSITY   (Japan)

^c SHIZUOKA UNIVERSITY   (Japan)

^d HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Coulomb blockade; Dopant; Hopping; Nanodeice; Silicon; Transport properties

Indexed keywords

BORON; COULOMB BLOCKADE; DOPING (ADDITIVES); ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; SILICON;

HOPPING; LARGE DIMENSIONS; NANODEICE; NANOSCALE TRANSISTORS; P-CHANNEL FIELD EFFECT TRANSISTORS; SINGLE-DOPANT ELECTRONICS; TRANSISTOR OPERATION; TRAPPING/DETRAPPING;

FIELD EFFECT TRANSISTORS;

EID: 45449086227     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.161     Document Type: Article

References (20)

1. Hollenberg L.C.L., Dzurak A.S., Wellard C., Hamilton A.R., Reilly D.J., Milburn G.J., and Clark R.G. Phys. Rev. B 69 (2004) 113301
2. Cole J.H., Greentree A.D., Wellard C.J., Hollenberg L.C.L., and Prawer S. Phys. Rev. B 71 (2005) 115302
3. Shinada T., Okamoto S., Kobayashi T., and Ohdomari I. Nature (Lond.) 437 (2005) 1128
4. Schenkel T., Persaud A., Park S.J., Nilsson J., Bokor J., Liddle J.A., Keller R., Schneider D.H., Cheng D.W., Humphries D.E., and Lawrence E.O. J. Appl. Phys. 94 (2003) 7017
5. McEuen P.L., Alphenaar B.W., Wheeler R.G., and Sacks R.N. Surf. Sci. 229 (1990) 312
6. Dellow M.W., Beton P.H., Langerak C.J.G.M., Foster T.J., Main P.C., Eaves L., Henini M., Beaumont S.P., and Wilkinson C.D.W. Phys. Rev. Lett. 68 (1992) 1754
7. Robinson S.J., Kline J.S., Wheelwright H.J., Tucker J.R., Yang C.L., Du R.R., Volland B.E., Rangelow I.W., and Shen T.-C. Phys. Rev. B 74 (2006) 153311
8. Buehler T.M., Chan V., Ferguson A.J., Dzurak A.S., Hudson F.E., Reilly D.J., Hamilton A.R., Clark R.G., Jamieson D.N., Yang C., Pakes C.I., and Prawer S. Appl. Phys. Lett. 88 (2006) 192101
9. Hofheinz M., Jehl X., Sanquer M., Molas G., Vinet M., and Deleonibus S. Appl. Phys. Lett. 89 (2006) 143504
10. Sellier H., Lansbergen G.P., Caro J., Rogge S., Collaert N., Ferain I., Jurczak M., and Biesemans S. Phys. Rev. Lett. 97 (2006) 206805
11. Calvet L.E., Wheeler R.G., and Reed M.A. Phys. Rev. Lett. 98 (2007) 096805
12. Ono Y., Nishiguchi K., Fujiwara A., Yamaguchi H., Inokawa H., and Takahashi Y. Appl. Phys. Lett. 90 (2007) 102106
13. Andresen S.E.S., Brenner R., Wellard C.J., Yang C., Hopf T., Escott C.C., Clark R.G., Dzurak A.S., Jamieson D.N., and Hollenberg L.C.L. Nano Lett. 7 (2007) 2000
14. Burhanudin Z.A., Nuryadi R., and Tabe M. Appl. Phys. Lett. 91 (2007) 042103
15. Ono Y., Morizur J.-F., Nishiguchi K., Takashina K., Yamaguchi H., Hiratsuka K., Horiguchi S., Inokawa H., and Takahashi Y. Phys. Rev. B 74 (2006) 235317
16. Morizur J.-F., Ono Y., Kageshima H., Inokawa H., and Yamaguchi H. Phys. Rev. Lett. 98 (2007) 166601
17. Ono Y., Nishiguchi K., Inokawa H., Horiguchi S., and Takahashi Y. Jpn. J. Appl. Phys. 44 (2005) 2588
18. Khalafalla M.A.H., Ono Y., Nishiguchi K., and Fujiwara A. Appl. Phys. Lett. 91 (2007) 263513
19. Shklovskii B.I., and Efros A.L. Electronic Properties of Doped Semiconductors (1984), Springer-Verlag, Berlin
20. Burger W., and Lassmann K. Phys. Rev. Lett. 53 (1984) 2035