Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K

Physical Review B - Condensed Matter and Materials Physics

Volumn 74, Issue 23, 2006, Pages

  Ono, Yukinori ^a   Morizur, Jean Francois ^a   Nishiguchi, Katsuhiko ^a   Takashina, Kei ^a   Yamaguchi, Hiroshi ^a   Hiratsuka, Kazuma ^b   Horiguchi, Seiji ^b   Inokawa, Hiroshi ^c   Takahashi, Yasuo ^d  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b AKITA UNIVERSITY   (Japan)

^c SHIZUOKA UNIVERSITY   (Japan)

^d HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33845534204     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.235317     Document Type: Article

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