High-saturation-current InP-InGaAs photodiode with partially depleted absorber

IEEE Photonics Technology Letters

Volumn 15, Issue 9, 2003, Pages 1276-1278

  Li, Xiaowei ^a   Li, Ning ^a   Zheng, Xiaoguang ^a   Demiguel, Stephane ^a   Campbell, J C ^a   Tulchinsky, David A ^b   Williams, Keith J ^b  

^a The University of Texas at Austin   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Frequency response; P i n photodiodes; Photocurrent; Photodetectors; Photodiodes

Indexed keywords

BANDWIDTH; FREQUENCY RESPONSE; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

PARTIALLY DEPLETED ABSORBER; UNI-TRAVELING CARRIER;

PHOTODIODES;

EID: 0141674838     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.816118     Document Type: Article

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