Gain dependence of the noise in the single electron transistor

Journal of Applied Physics

Volumn 86, Issue 4, 1999, Pages 2132-2136

  Starmark, B ^a   Henning, Torsten ^a   Claeson, T ^a   Delsing, P ^a   Korotkov, A N ^b  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001174768     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371020     Document Type: Article

References (28)

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27. The noise is larger when the current is determined by the fluctuating junction resistance to a greater extent than by the other junction.
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