Analysis of the radio-frequency single-electron transistor with large quality factor

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2898-2900

  Turin, Valentin O ^a   Korotkov, Alexander N ^a  

^a University of California Riverside   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; ELECTRIC IMPEDANCE; QUANTUM INTERFERENCE DEVICES; RESONANCE;

SINGLE-ELECTRON TRANSISTORS (SET);

TRANSISTORS;

EID: 0142260528     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1614840     Document Type: Article

References (21)

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17. 2. The numerical results show that such asymmetry provides a slightly better performance of the rf-SET (that eliminates the concern about asymmetric biasing raised in Ref. 5).
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