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Volumn 44, Issue 9-11 SPEC. ISS., 2004, Pages 1491-1496

Mie-Grüneisen analysis of the molecular bonding states in silica which impact time-dependent dielectric breakdown

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BREAKDOWN; DIPOLE-MOMENT; MOLECULAR BONDING STATES; SILICA-BASED DIELECTRICS;

EID: 4544334754     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.07.045     Document Type: Conference Paper
Times cited : (1)

References (15)
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    • Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide
    • E. Wu, et. al., Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide, IEEE-IRPS, 60 (2002).
    • (2002) IEEE-IRPS , pp. 60
    • Wu, E.1
  • 6
    • 84955240546 scopus 로고    scopus 로고
    • Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics
    • IEEE, Piscataway, NJ
    • Ennis Ogawa, et. al., Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics, International Reliability Physics Proceedings (IEEE, Piscataway, NJ,), p. 166-172 (2003).
    • (2003) International Reliability Physics Proceedings , pp. 166-172
    • Ogawa, E.1
  • 7
    • 1942512607 scopus 로고    scopus 로고
    • Quantitative analysis of oxide voltage and field dependence of time-dependent dielectric soft breakdown and hard breakdown in ultrathin gate oxides
    • W. Mizubayashi, et. al., Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides, Jpn. J. Appl. Phys., p. 2426-2430 (2002).
    • (2002) Jpn. J. Appl. Phys. , pp. 2426-2430
    • Mizubayashi, W.1
  • 8
    • 0037004808 scopus 로고    scopus 로고
    • Experimental evidence of Tbd power-law for voltage dependence of oxide breakdown in ultrathin gate oxides
    • E. Y. Wu, et. al., Experimental Evidence of Tbd Power-Law for Voltage Dependence of Oxide Breakdown in Ultrathin Gate Oxides, IEEE Trans, on Elect. Devs., Vol. 49, No. 12, p2244-2253 (2002).
    • (2002) IEEE Trans, on Elect. Devs. , vol.49 , Issue.12 , pp. 2244-2253
    • Wu, E.Y.1
  • 12
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    • Atomic scale defects involved in MOS reliability problems
    • IEEE, Piscataway, NJ
    • P.M. Lenahan, Atomic scale defects involved in MOS reliability problems, International Reliability Physics Tutorials (IEEE, Piscataway, NJ), p223.23 (2002).
    • (2002) International Reliability Physics Tutorials
    • Lenahan, P.M.1
  • 13
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    • Anode hole injections versus hydrogen release: The mechanism for gate oxide breakdown
    • IEEE, Piscataway, NJ
    • J. Wu, et.al, Anode hole injections versus hydrogen release: the mechanism for gate oxide breakdown, International Reliability Physics Proceedings (IEEE, Piscataway, NJ), 27 (2000).
    • (2000) International Reliability Physics Proceedings , pp. 27
    • Wu, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.