Low temperature operation of undoped body triple-gate FinFETs from an analog perspective

ECS Transactions

Volumn 9, Issue 1, 2007, Pages 19-27

  Pavanello, M A ^a,b   Martino, J A ^b   Simoen, E ^c   Rooyackers, R ^c   Collaert, N ^c   Claeys, C ^c,d  

^a CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT RATIOS; DC MEASUREMENTS; ELECTROCHEMICAL SOCIETY (ECS); FIGURES OF MERIT (FOM); FINFETS; FULLY DEPLETED SOI (FD SOI); LOW TEMPERATURE (LTR); MICROELECTRONICS TECHNOLOGY; OUTPUT CONDUCTANCE; SINGLE GATE (SG); TEMPERATURE DEGRADATION; TEMPERATURE DEPENDENT; TEMPERATURE REDUCTION; TRIPLE GATE; UNDOPED BODY;

CMOS INTEGRATED CIRCUITS; COMPUTER NETWORKS; DRAIN CURRENT; ELECTRONICS INDUSTRY; MICROELECTRONICS; MOSFET DEVICES; NEODYMIUM; REDUCTION; SULFATE MINERALS; TECHNOLOGY;

TEMPERATURE;

EID: 45249123219     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2766870     Document Type: Conference Paper

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