Effects of ALD TiN metal gate thickness on metal gate /high-k dielectric SOI FinFET characteristics

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2006, Pages 135-136

  Kang, C Y ^a   Choi, R ^a   Song, S C ^a   Ju, B S ^a   Hussain, M M ^a   Lee, B H ^b   Yang, J W ^a   Zeitzoff, P ^a   Pham, D ^c   Xiong, W ^c   Tseng, H H ^c  

^a SEMATECH   (United States)

^b IBM   (United States)

^c Freescale Assignee ^*

Author keywords

[No Author keywords available]

Indexed keywords

HOLE MOBILITY; OPTIMIZATION; SILICON ON INSULATOR TECHNOLOGY; STRAIN; THICKNESS MEASUREMENT; TITANIUM NITRIDE;

INTERFACE QUALITY; VERTICAL STRAIN EFFECT;

GATE DIELECTRICS;

EID: 43749098761     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2006.284472     Document Type: Conference Paper

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