Oxygen transfer from metal gate to high-k gate dielectric stack: Interface structure & property changes

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 213-218

  Ha, Jeong Hee ^a   Alshareef, Husam ^b   Chambers, Jim ^b   Sun, Yun ^c   Pianetta, Piero ^c   McIntyre, Paul C ^a   Colombo, Luigi ^b  

^a STANFORD UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; GATE DIELECTRICS; GRAIN BOUNDARIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HIGH-K DIELECTRIC; LOGIC GATES; METALS; NITROGEN COMPOUNDS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; TANTALUM COMPOUNDS;

ATMOSPHERIC OXYGEN; EXPERIMENTAL EVIDENCE; HIGH- K GATE DIELECTRICS; INTERFACE STRUCTURES; INTERFACIAL OXIDES; OXIDE INTERFACES; UNDERLYING LAYERS; WORKFUNCTION METALS;

DIELECTRIC MATERIALS;

EID: 45249098912     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779562     Document Type: Conference Paper

References (9)

1. E P Gusev, V. Narayanan, and M. M. Frank, IBM Journal of Research and Development, 50, 387 (2006)
2. J. K. Efavi, T. Mollenhauer, T Wahlbrink, H. D. B. Gottlob, M. C. Lemme, and H. Kurz, J. Mat. Sci., 16, 433 (2005)
3. R. Jha, B. Lee, B. Chen, S. Novak, P. Majhi, and V. Misra, IEDM v.2005, 43-46 (2005)
4. J. K. Schaeffer, L R. C. Fonseca, S. B. Samavedam, Y. Liang, P. J. Tobin, and B. E. White, Appl. Phys. Lett. 85, 1826 (2004)
5. ASM Phase Diagram Center (on-line)
6. M Sato, Appl Surf. Sci., 82-83, 532 (1994)
7. B Chen, R Jah, H. Lazar, N. Biswas, J. Lee, B. Lee, L. Wielunski, E. Garfunkel, and V. Misra, EDL, 27, 228 (2006)
8. K I. Seo, D I. Lee, P. Pianetta, H Kim, K. C Saraswat, andP, C. McIntyre,Appl Phys. Lett. 89, 142912 (2006)
9. E J Preisler, S Guha, M Copel, N. A. Bojarezuk, M. C Reuter, and E. Gusev, Appl. Phys. Lett 85, 6230 (2004)