Tungsten work function engineering for dual metal gate nano-CMOS

Journal of Materials Science: Materials in Electronics

Volumn 16, Issue 7, 2005, Pages 433-436

  Efavi, J K ^a   Mollenhauer, T ^a   Wahlbrink, T ^a   Gottlob, H D B ^a   Lemme, M C ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CMOS INTEGRATED CIRCUITS; COMPOSITION EFFECTS; DIELECTRIC DEVICES; ENERGY GAP; MOSFET DEVICES; NANOTECHNOLOGY; SILICA; SILICON ON INSULATOR TECHNOLOGY;

BUFFER LAYER TECHNOLOGY; DUAL METAL GATE NANO-CMOS; GATE MATERIAL; MID-GAP VALUE; TUNGSTEN WORK FUNCTION;

TUNGSTEN;

EID: 24944445857     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10854-005-2310-8     Document Type: Article

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