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Volumn 63, Issue 3, 1993, Pages 379-381

GaAs surface passivation by deposition of an ultrathin InP-related layer

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Indexed keywords


EID: 0006064194     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.110049     Document Type: Article
Times cited : (32)

References (18)
  • 10
    • 84950557983 scopus 로고    scopus 로고
    • In this experiment, there is a possibility that some As sites in the substrate are replaced by P atoms during the treatment. Namely, the practical ultrathin layer can be an InGaAsP with a small fraction of As, InGa(As)P, or InGaP. Thus, it is natural to refer this layer as an InP-related layer instead of InP.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.