Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements

Applied Physics Letters

Volumn 90, Issue 15, 2007, Pages

  Wong, K M ^a   Chim, W K ^a   Ang, K W ^a   Yeo, Y C ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIFFUSION; GATE DIELECTRICS; GERMANIUM; INTERFACES (MATERIALS); TRANSISTORS;

DIFFERENTIAL CAPACITANCE; GATE OXIDE; INTERFACE TRAP DENSITY; SCANNING CAPACITANCE MICROSCOPY;

CHARGE DENSITY;

EID: 34247180756     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2721868     Document Type: Article

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