GaN property evolution at all stages of MOVPE Si/N treatment growth

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 1, 2007, Pages 129-132

  Halidou, I ^a   Benzarti, Z ^a   Fitouri, H ^a   Fathallah, W ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

AFM IMAGING; BLUE LASERS; DERIVED EXPRESSIONS; GAN GROWTH; GAN LAYERS; GROWTH STAGES; HE-NE LASERS; IN-SITU; INDEX VARIATIONS; INTERNATIONAL SYMPOSIUM; ISLAND GROWTH; LASER REFLECTOMETRY; OPTICAL-; REGULAR OSCILLATIONS; SAPPHIRE SUBSTRATES; TRANSMITTANCE MEASUREMENTS;

ATOMIC FORCE MICROSCOPY; CORUNDUM; ECOLOGY; GALLIUM ALLOYS; GALLIUM NITRIDE; HELIUM; IMAGE ENHANCEMENT; LASERS; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; MICROSCOPIC EXAMINATION; NEON; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; REFLECTION; REFLECTOMETERS; REFRACTIVE INDEX; SAPPHIRE; SCANNING PROBE MICROSCOPY; SEMICONDUCTING GALLIUM;

IMAGING TECHNIQUES;

EID: 44749089064     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200673532     Document Type: Conference Paper

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