Diffusion of vanadium in GaAs

Journal of Crystal Growth

Volumn 270, Issue 3-4, 2004, Pages 376-379

  Bchetnia, A ^a   Souissi, M ^a   Rebey, A ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

A1. Diffusion; A3. Metalorganic chemical vapor deposition; B1. GaAs; B1. Vanadium

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; DIFFUSION; DOPING (ADDITIVES); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSITION METALS;

CRYSTAL LATTICE; DIFFUSION COEFFICIENTS; GAUSSIAN FITTED CURVES; UNDOPED LAYERS;

VANADIUM;

EID: 4544373065     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.007     Document Type: Article

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