Development of novel germanium compounds for use in SiGe epitaxy

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 867-873

  Shenai, D V ^a   DiCarlo, R L ^a   Power, M B ^a   Amamchyan, A ^a   Goyette, R ^a   Sagnes, I ^b   Woelk, E ^b  

^a ROHM AND HAAS COMPANY   (United States)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; PURIFICATION; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

ENVIRONMENT, HEALTH AND SAFETY (EHS); FILM PROPERTIES; GERMANIUM SOURCES; SIGE EPITAXY; STRATEGIC DEPOSITION PROCESS;

GERMANIUM COMPOUNDS;

EID: 33846982610     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355882     Document Type: Conference Paper

References (9)

1. E. Woelk, D. Shenai, P. Storck and I. Sagnes, "Ge Precursors for Strained Si and Compound Semiconductors", Semiconductor International, April 2006.
2. E. Woelk, D.V. Shenai-Khatkhate, R.L. DiCarlo, A. Amamchyan, M.B. Power, B. Lamare, G. Beaudoin and I. Sagnes, J. Crystal Growth, 287, 684 (2006).
3. P. Singer, "Strained Silicon Ready for Prime Time", Semiconductor International, Nov 2002
4. E.A. Fitzgerald, R. Westhoff, M.T. Currie, C.J. Vineis, T.A. Langdo, US Pat App 20030230233.
5. Material Safety Data Sheet for Germane, Matheson Tri-Gas Company, USA, 2006.
6. ACGIH, TLV and BEIs, 2005.
7. G.B. Gerber and A. Leonard, Mutation Research, 387, 141 (1997).
8. B.P. Fisher and P.L. Goering, Germanium, in E. Marian (Ed.), "Metals and Their Compounds in the Environment", VCH, Weinheim, 1991, and the references therein.
9. G.B. Gerber, Germanium, in H.G. Seiler, H. Sigel, A. Sigel (Ed.), "Handbook on Toxicity of Inorganic Compounds", Marcel Dekker, New York, 1988, and references therein.