Bottom cell growth aspects for triple junction InGaP/(In)GaAs/Ge solar cells

Crystal Research and Technology

Volumn 40, Issue 10-11, 2005, Pages 1043-1047

  Timo G ^a   Flores, C ^a   Campesato, R ^a  

^a CESI   (Italy)

Author keywords

AlGaAs Ge; GaAs Ge; Ge bottom cell; Growth; InGaP Ge; MOVPE; Multijunction; Solar cells

Indexed keywords

DOPING (ADDITIVES); LATTICE VIBRATIONS; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

ALGAAS/GE; GAAS/GE; GE BOTTOM CELL; INGAP/GE; MULTIJUNCTION;

SOLAR CELLS;

EID: 27744463962     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200410483     Document Type: Conference Paper

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