Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 172-175

  Shenai, Deo V ^a   DiCarlo Jr , Ronald L ^a   Power, Michael B ^a   Amamchyan, Artashes ^a   Goyette, Randall J ^a   Woelk, Egbert ^a  

^a ROHM AND HAAS COMPANY   (United States)

Author keywords

A1. Characterization; A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Organo germanium compounds; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium

Indexed keywords

FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THERMOANALYSIS;

GERMANIUM TETRACHLORIDE; ISO-BUTYL GERMANE (IBGE); ORGANO GERMANIUM COMPOUNDS; ORGANOMETALLIC VAPO -PHASE EPITAXY;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 33846406919     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.194     Document Type: Article

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