-
1
-
-
44649117153
-
-
1999 International Technology Roadmafor Semiconductors, Semiconductor Industry Association, San Jose, CA.
-
1999 International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 2002.
-
(2002)
-
-
-
2
-
-
0033600230
-
-
D. Muller, T. Sorsch, S. Moccio, F. Baumann, K. Evans-Lutterdodt, and G. Timp, Nature (London) 399, 758 (1999).
-
(1999)
Nature (London)
, vol.399
, pp. 758
-
-
Muller, D.1
Sorsch, T.2
Moccio, S.3
Baumann, F.4
Evans-Lutterdodt, K.5
Timp, G.6
-
5
-
-
0033339409
-
-
MRS Symposia Proceedings No. 567 (Materials Research Society, Pittsburgh).
-
Z. Yu, R. Droopad, J. Ramdani, J. Curless, C. Overgaard, J. Finder, K. Eisenbeiser, J. Wang, J. Hallmark, and W. Ooms, MRS Symposia Proceedings No. 567 (Materials Research Society, Pittsburgh, 1999) p. 427.
-
(1999)
, pp. 427
-
-
Yu, Z.1
Droopad, R.2
Ramdani, J.3
Curless, J.4
Overgaard, C.5
Finder, J.6
Eisenbeiser, K.7
Wang, J.8
Hallmark, J.9
Ooms, W.10
-
6
-
-
0001642112
-
-
K. Eisenbeiser, J. Finder, Z. Yu, J. Ramdani, J. Curless, J. Hallmark, R. Droopad, W. Ooms, L. Salem, S. Bradshaw, and C. D. Overgaard, Appl. Phys. Lett. 76, 1324 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 1324
-
-
Eisenbeiser, K.1
Finder, J.2
Yu, Z.3
Ramdani, J.4
Curless, J.5
Hallmark, J.6
Droopad, R.7
Ooms, W.8
Salem, L.9
Bradshaw, S.10
Overgaard, C.D.11
-
7
-
-
0242523727
-
-
X. Zhang, A. A. Demkov, H. Li, X. Hu, Y. Wei, and J. Kulik, Phys. Rev. B 68, 125323 (2003).
-
(2003)
Phys. Rev. B
, vol.68
, pp. 125323
-
-
Zhang, X.1
Demkov, A.A.2
Li, H.3
Hu, X.4
Wei, Y.5
Kulik, J.6
-
9
-
-
0038179370
-
-
R. McKee, F. J. Walker, M. Buongiorno Nardelli, W. A. Shelton, and G. M. Stocks, Science 300, 1726 (2003).
-
(2003)
Science
, vol.300
, pp. 1726
-
-
McKee, R.1
Walker, F.J.2
Buongiorno Nardelli, M.3
Shelton, W.A.4
Stocks, G.M.5
-
10
-
-
0038341908
-
-
H. Li, X. Hu, Y. Wei, Z. Yu, X. Zhang, A. A. Demkov, J. Edwards, Jr., K. Moore, and W. Ooms, J. Appl. Phys. 93, 4521 (2003).
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 4521
-
-
Li, H.1
Hu, X.2
Wei, Y.3
Yu, Z.4
Zhang, X.5
Demkov, A.A.6
Edwards Jr., J.7
Moore, K.8
Ooms, W.9
-
11
-
-
0037382123
-
-
R. Droopad, Z. Yu, H. Li, Y. Liang, C. Overgaard, A. A. Demkov, X. Zhang, K. Moore, K. Eisenbeiser, M. Hu, J. Curless, and J. Finder, J. Cryst. Growth 251, 638 (2003).
-
(2003)
J. Cryst. Growth
, vol.251
, pp. 638
-
-
Droopad, R.1
Yu, Z.2
Li, H.3
Liang, Y.4
Overgaard, C.5
Demkov, A.A.6
Zhang, X.7
Moore, K.8
Eisenbeiser, K.9
Hu, M.10
Curless, J.11
Finder, J.12
-
12
-
-
0035982548
-
-
Y. Wei, X. Hu, Y. Liang, D. Jordan, B. Craigo, R. Droopad, Z. Yu, A. A. Demkov, J. Edwards, Jr., and W. Ooms, J. Vac. Sci. Technol. B 20, 1402 (2002).
-
(2002)
J. Vac. Sci. Technol. B
, vol.20
, pp. 1402
-
-
Wei, Y.1
Hu, X.2
Liang, Y.3
Jordan, D.4
Craigo, B.5
Droopad, R.6
Yu, Z.7
Demkov, A.A.8
Edwards Jr., J.9
Ooms, W.10
-
13
-
-
0001263824
-
-
0163-1829 10.1103/PhysRevB.42.1254, ();, Appl. Phys. Lett. 22, 3591 (2001).
-
W. C. Fan, N. J. Wu, and A. Ignatiev, Phys. Rev. B 0163-1829 10.1103/PhysRevB.42.1254 42, 1254 (1990); Y. Liang, S. Gan, and M. Engelhard, Appl. Phys. Lett. 22, 3591 (2001).
-
(1990)
Phys. Rev. B
, vol.42
, pp. 1254
-
-
Fan, W.C.1
Wu, N.J.2
Ignatiev, A.3
Liang, Y.4
Gan, S.5
Engelhard, M.6
-
14
-
-
0003732752
-
-
J. Wang, J. A. Hallmark, D. S. Marshall, W. J. Ooms, P. Ordejon, J. Junquera, D. Sanchez-Portal, E. Artacho, and J. M. Soler, Phys. Rev. B 60, 4968 (1999).
-
(1999)
Phys. Rev. B
, vol.60
, pp. 4968
-
-
Wang, J.1
Hallmark, J.A.2
Marshall, D.S.3
Ooms, W.J.4
Ordejon, P.5
Junquera, J.6
Sanchez-Portal, D.7
Artacho, E.8
Soler, J.M.9
-
15
-
-
0006838610
-
-
D. Sanchez-Portal, P. Ordejon, E. Artacho, and J. M. Soler, Int. J. Quantum Chem. 65, 453 (1997).
-
(1997)
Int. J. Quantum Chem.
, vol.65
, pp. 453
-
-
Sanchez-Portal, D.1
Ordejon, P.2
Artacho, E.3
Soler, J.M.4
-
19
-
-
21244471846
-
-
(Cambridge University Press, Cambridge).
-
R. M. Martin, Electronic Structure (Cambridge University Press, Cambridge, 2004) p. 545.
-
(2004)
Electronic Structure
, pp. 545
-
-
Martin, R.M.1
-
22
-
-
0001509549
-
-
proposed a class of intermetallic compounds in which the CT from the more electropositive metal forces the other metal to assume the bonding arrangement typical of the next column element., 0372-9664, ();, Angew. Chem. 52, 1 (1939).
-
E. Zintl proposed a class of intermetallic compounds in which the CT from the more electropositive metal forces the other metal to assume the bonding arrangement typical of the next column element. E. Zintl and W. Dullenkopf, Z. Phys. Chem. Abt. B 0372-9664 B16, 183 (1932); E. Zintl, Angew. Chem. 52, 1 (1939).
-
(1932)
Z. Phys. Chem. Abt. B
, vol.16
, pp. 183
-
-
Zintl, E.1
Zintl, E.2
Dullenkopf, W.3
Zintl, E.4
-
23
-
-
44649104856
-
-
personal communication (March 1).
-
M. Hu, personal communication (March 1, 2003).
-
(2003)
-
-
Hu, M.1
-
24
-
-
35949016741
-
-
From the complex band structure of Si [e.g., ()], we know that at the charge neutrality level (0.2 eV above the valence band edge) the complex wave vector is about 0.2 Å-1, in other words, the charge in the evanescent state penetrates about 4 Å into Si. Assuming a full monolayer coverage that would result in the electron density of about 1022 cm-3 and the Debye length on the order of 1 Å, therefore, the surface region is metallic and the electrostatic potential of the Sr ion is screened. Thus, the bending is just a shift.
-
From the complex band structure of Si [e.g., S. Krishnamurthy and J. A. Moriarty, Phys. Rev. B 32, 1027 (1985)], we know that at the charge neutrality level (0.2 eV above the valence band edge) the complex wave vector is about 0.2 Å-1, in other words, the charge in the evanescent state penetrates about 4 Å into Si. Assuming a full monolayer coverage that would result in the electron density of about 1022 cm-3 and the Debye length on the order of 1 Å, therefore, the surface region is metallic and the electrostatic potential of the Sr ion is screened. Thus, the bending is just a shift.
-
(1985)
Phys. Rev. B
, vol.32
, pp. 1027
-
-
Krishnamurthy, S.1
Moriarty, J.A.2
|