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Volumn 103, Issue 10, 2008, Pages

Theory of the Sr-induced reconstruction of the Si (001) surface

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; GEOMETRY; INTERFACIAL ENERGY; MONOLAYERS; SILICON; SURFACE RECONSTRUCTION;

EID: 44649199862     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2924433     Document Type: Article
Times cited : (31)

References (26)
  • 1
    • 44649117153 scopus 로고    scopus 로고
    • 1999 International Technology Roadmafor Semiconductors, Semiconductor Industry Association, San Jose, CA.
    • 1999 International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 2002.
    • (2002)
  • 13
    • 0001263824 scopus 로고
    • 0163-1829 10.1103/PhysRevB.42.1254, ();, Appl. Phys. Lett. 22, 3591 (2001).
    • W. C. Fan, N. J. Wu, and A. Ignatiev, Phys. Rev. B 0163-1829 10.1103/PhysRevB.42.1254 42, 1254 (1990); Y. Liang, S. Gan, and M. Engelhard, Appl. Phys. Lett. 22, 3591 (2001).
    • (1990) Phys. Rev. B , vol.42 , pp. 1254
    • Fan, W.C.1    Wu, N.J.2    Ignatiev, A.3    Liang, Y.4    Gan, S.5    Engelhard, M.6
  • 19
    • 21244471846 scopus 로고    scopus 로고
    • (Cambridge University Press, Cambridge).
    • R. M. Martin, Electronic Structure (Cambridge University Press, Cambridge, 2004) p. 545.
    • (2004) Electronic Structure , pp. 545
    • Martin, R.M.1
  • 22
    • 0001509549 scopus 로고
    • proposed a class of intermetallic compounds in which the CT from the more electropositive metal forces the other metal to assume the bonding arrangement typical of the next column element., 0372-9664, ();, Angew. Chem. 52, 1 (1939).
    • E. Zintl proposed a class of intermetallic compounds in which the CT from the more electropositive metal forces the other metal to assume the bonding arrangement typical of the next column element. E. Zintl and W. Dullenkopf, Z. Phys. Chem. Abt. B 0372-9664 B16, 183 (1932); E. Zintl, Angew. Chem. 52, 1 (1939).
    • (1932) Z. Phys. Chem. Abt. B , vol.16 , pp. 183
    • Zintl, E.1    Zintl, E.2    Dullenkopf, W.3    Zintl, E.4
  • 23
    • 44649104856 scopus 로고    scopus 로고
    • personal communication (March 1).
    • M. Hu, personal communication (March 1, 2003).
    • (2003)
    • Hu, M.1
  • 24
    • 35949016741 scopus 로고
    • From the complex band structure of Si [e.g., ()], we know that at the charge neutrality level (0.2 eV above the valence band edge) the complex wave vector is about 0.2 Å-1, in other words, the charge in the evanescent state penetrates about 4 Å into Si. Assuming a full monolayer coverage that would result in the electron density of about 1022 cm-3 and the Debye length on the order of 1 Å, therefore, the surface region is metallic and the electrostatic potential of the Sr ion is screened. Thus, the bending is just a shift.
    • From the complex band structure of Si [e.g., S. Krishnamurthy and J. A. Moriarty, Phys. Rev. B 32, 1027 (1985)], we know that at the charge neutrality level (0.2 eV above the valence band edge) the complex wave vector is about 0.2 Å-1, in other words, the charge in the evanescent state penetrates about 4 Å into Si. Assuming a full monolayer coverage that would result in the electron density of about 1022 cm-3 and the Debye length on the order of 1 Å, therefore, the surface region is metallic and the electrostatic potential of the Sr ion is screened. Thus, the bending is just a shift.
    • (1985) Phys. Rev. B , vol.32 , pp. 1027
    • Krishnamurthy, S.1    Moriarty, J.A.2


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