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Volumn 23, Issue 5, 2008, Pages 1433-1442

Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FILMS; LIGHT ABSORPTION; OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 44649115221     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2008.0176     Document Type: Article
Times cited : (2)

References (21)
  • 2
    • 0029327794 scopus 로고
    • Plasma enhanced growth, composition and refractive index of silicon oxynitride films
    • K.E. Mattsson: Plasma enhanced growth, composition and refractive index of silicon oxynitride films. J. Appl. Phys. 77(12), 6616 (1995).
    • (1995) J. Appl. Phys , vol.77 , Issue.12 , pp. 6616
    • Mattsson, K.E.1
  • 6
    • 0036686669 scopus 로고    scopus 로고
    • Silicon oxynitride - A versatile material for integrated optics application
    • K. Worhoff, L.T.H. Hilderink, A. Driessen, and P.V. Lambeck: Silicon oxynitride - A versatile material for integrated optics application. J. Electrochem. Soc. 149(8), F85 (2002).
    • (2002) J. Electrochem. Soc , vol.149 , Issue.8
    • Worhoff, K.1    Hilderink, L.T.H.2    Driessen, A.3    Lambeck, P.V.4
  • 8
    • 0141441179 scopus 로고    scopus 로고
    • Design, tolerance analysis and fabrication of silicon oxynitride based planar optical waveguides for communication devices
    • K. Worhoff, P.V. Lambeck, and A. Driessen: Design, tolerance analysis and fabrication of silicon oxynitride based planar optical waveguides for communication devices. J. Light-wave Technol. 17(8), 1401 (1999).
    • (1999) J. Light-wave Technol , vol.17 , Issue.8 , pp. 1401
    • Worhoff, K.1    Lambeck, P.V.2    Driessen, A.3
  • 9
    • 84916142424 scopus 로고
    • Deposition of silicon oxynitride thin films by remote plasma enhanced chemical vapor deposition
    • D.V. Tsu, G. Lucovsky, M.J. Mantini, and S.S. Chao: Deposition of silicon oxynitride thin films by remote plasma enhanced chemical vapor deposition. J. Vac. Sci. Technol., A 5, 1998 (1987).
    • (1987) J. Vac. Sci. Technol., A , vol.5 , pp. 1998
    • Tsu, D.V.1    Lucovsky, G.2    Mantini, M.J.3    Chao, S.S.4
  • 10
    • 33645374893 scopus 로고
    • Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition
    • G. Lucovsky, P.D. Richard, D.V. Tsu, S.Y. Lin, and R.J. Markunas: Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition. J. Vac. Sci. Technol., A 4, 681 (1986).
    • (1986) J. Vac. Sci. Technol., A , vol.4 , pp. 681
    • Lucovsky, G.1    Richard, P.D.2    Tsu, D.V.3    Lin, S.Y.4    Markunas, R.J.5
  • 11
    • 84950522194 scopus 로고
    • Auger electron spectroscopy studies of silicon nitride, oxide, and oxynitride thin films: Minimization of surface damage by argon and electron beams
    • S.S. Chao, J.E. Tyler, D.V. Tsu, G. Lucovsky, and M.J. Mantini: Auger electron spectroscopy studies of silicon nitride, oxide, and oxynitride thin films: Minimization of surface damage by argon and electron beams. J. Vac. Sci. Technol., A 5, 1283 (1987).
    • (1987) J. Vac. Sci. Technol., A , vol.5 , pp. 1283
    • Chao, S.S.1    Tyler, J.E.2    Tsu, D.V.3    Lucovsky, G.4    Mantini, M.J.5
  • 12
    • 0039436914 scopus 로고    scopus 로고
    • 2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
    • 2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits. J. Appl. Phys. 90, 2057 (2001).
    • (2001) J. Appl. Phys , vol.90 , pp. 2057
    • Green, M.L.1    Gusev, E.P.2    Degraeve, R.3    Garfunkel, E.L.4
  • 15
    • 0001089210 scopus 로고    scopus 로고
    • Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides
    • H.C. Lu, E.P. Gusev, T. Gustafsson, and E. Garfunkel: Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides. J. Appl. Phys. 81, 6992 (1997).
    • (1997) J. Appl. Phys , vol.81 , pp. 6992
    • Lu, H.C.1    Gusev, E.P.2    Gustafsson, T.3    Garfunkel, E.4
  • 17
    • 44649114595 scopus 로고    scopus 로고
    • C.D. Wagner, A.V. Naumkin, A. Kraut-Vass, J.W. Allison, C.J. Powell, and J.R. Rumble, Jr.: NIST X-Ray Photoelectron Spectroscopy Database, NIST Standard Reference Database 20, version 3.4 (Web version), available online at: http://srdata.nist.gov/xps.
    • C.D. Wagner, A.V. Naumkin, A. Kraut-Vass, J.W. Allison, C.J. Powell, and J.R. Rumble, Jr.: NIST X-Ray Photoelectron Spectroscopy Database, NIST Standard Reference Database 20, version 3.4 (Web version), available online at: http://srdata.nist.gov/xps.
  • 21
    • 29744466881 scopus 로고    scopus 로고
    • Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films
    • S. Naskar, C.A. Bower, S.D. Wolter, B.R. Stoner, and J.T. Glass: Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films. Appl. Phys. Lett. 87, 261,907 (2005).
    • (2005) Appl. Phys. Lett , vol.87 , pp. 261-907
    • Naskar, S.1    Bower, C.A.2    Wolter, S.D.3    Stoner, B.R.4    Glass, J.T.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.