Nanometer-sized patterning of polysilicon thin films by high density plasma etching

Thin Solid Films

Volumn 467, Issue 1-2, 2004, Pages 172-175

  Song, Young Soo ^a   Kim, Jung Woo ^b   Chung, Chee Won ^a  

^a Inha University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Etching; High density plasma; Nanometer sized patterning; Nonvolatile memory; Polysilicon

Indexed keywords

HIGH DENSITY PLASMAS; NANOMETER-SIZED PATTERNING; NONVOLATILE MEMORY;

CHLORINE; ELECTRON BEAMS; INDUCTIVELY COUPLED PLASMA; PLASMA DENSITY; PLASMA ETCHING; POLYSILICON; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

THIN FILMS;

EID: 4444378372     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.03.025     Document Type: Article

References (13)

1. French M.L., White M.H. Solid-State Electron. 37:1994;1913.
2. Su H.P., Liu H.W., Hong G., Cheng H.C. IEEE Electron Device Lett. 15:1994;440.
3. Yang Y.L., Purwar A., White M.H. Solid-State Electron. 43:1999;2025.
4. Desvoivres L., Vallier L., Joubert O. J. Vac. Sci. Technol., B. 18:2000;156.
5. Yost D., Forte T., Fritze M., Astolfi D., Suntharalingam V., Chen C.K., Cann S. J. Vac. Sci. Technol., B. 20:2002;191.
6. Cardinale G.F., Henderson C.C., Goldsmith J.E.M., Mangat P.J.S., Cobb J., Hector S.D. J. Vac. Sci. Technol., B. 17:1999;2970.
7. Xu S., Sun Z., Chen A., Qian X., Podlesnik D. J. Vac. Sci. Technol., A. 19:2001;871.
8. Fritze M., Burns J., Wyatt P.W., Chen C.K., Gouker P., Chen C.L., Keast C., Astolfi D., Yost D., Preble D., Curtis A., Davis P., Cann S., Deneault S., Liu H.Y. J. Vac. Sci. Technol., B. 18:2000;2886.
9. Tennant D., Klemens F., Sorsch T., Baumann F., Timp G., Layadi N., Kornblit A., Sapjeta B.J., Rosamilia J., Boone T., Weir B., Silverman P. J. Vac. Sci. Technol., B. 15:1997;2799.
10. Tserepi A., Gogolides E., Cardinaud C., Rolland L., Turban G. Microelectron. Eng. 41:1998;411.
11. Yi W. J. Electrochem. Soc. 148:2001;G452.
12. Tuda M., Shintani K., Ootera H. J. Vac. Sci. Technol., A. 19:2001;711.
13. Gaboriau F., Peignon M.C., Barreau A., Turban G., Cardinaud C., Pfeiffer K., Bleidiebel G., Grutzner G. Microelectron. Eng. 53:2000;501.