Sub-100 nm silicon on insulator complimentary metal-oxide semiconductor transistors by deep ultraviolet optical lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 2886-2890

  Fritze, M ^a   Burns, J ^a   Wyatt, P W ^a   Chen, C K ^a   Gouker, P ^a   Chen, C L ^a   Keast, C ^a   Astolfi, D ^a   Yost, D ^a   Preble, D ^a   Curtis, A ^a   Davis, P ^a   Cann, S ^a   Deneault, S ^a   Liu, H Y ^b  

^a MIT LINCOLN LABORATORY   (United States)

^b SYNOPSYS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; ELECTRON MICROSCOPY; FABRICATION; PHASE SHIFT; PHOTOLITHOGRAPHY; PLASMA ETCHING; ULTRAVIOLET RADIATION;

DARK-FIELD CHROMELESS PHASE SHIFT LITHOGRAPHY (DFCPS); DEEP ULTRAVIOLET RADIATION (DUV) LITHOGRAPHY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034316880     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1314387     Document Type: Article

References (8)

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