Gate technology for 70 nm metal-oxide-semiconductor field-effect transistors with ultrathin (<2 nm) oxides

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2799-2805

  Tennant, D ^a   Klemens, F ^a   Sorsch, T ^a   Baumann, F ^a   Timp, G ^a   Layadi, N ^a   Kornblit, A ^a   Sapjeta, B J ^a   Rosamilia, J ^a   Boone, T ^a   Weir, B ^a   Silverman, P ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001085538     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589731     Document Type: Article

References (8)

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4. K. J. Hanson, J. Sapjeta, and G. S. Higashi, in Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials, edited by K. K. Schroder, J. L. Benton, and P. Rai-Choudhury (The Electrochemical Society, Pennington, NJ, 1994), pp. 355-369.
5. Y. Ma and M. L. Green, Proceedings of the 4th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, edited by R. E. Novak and J. Ruzyllo (The Electrochemical Society, Pennington, NJ, 1996), pp. 115-125.
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8. D. F. Kyser, J. Vac. Sci. Technol. B 1, 1391 (1983).