Influence of growth temperature and trimethylindium flow of InGaN wells on optical properties of InGaN multiple quantum-well violet light-emitting diodes

Chinese Physics Letters

Volumn 21, Issue 9, 2004, Pages 1845-1847

  Li, Zhong Hui ^a,c,d   Yu, Tong Jun ^b   Yang, Zhi Jian ^b   Tong, Yu Zhen ^b   Zhang, Guo Yi ^b   Feng, Yu Chun ^a   Guo, Bao Ping ^a   Niu, Han Ben ^a  

^a SHENZHEN UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

^c CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^d TIANJIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM ALLOYS; GROWTH TEMPERATURE; III-V SEMICONDUCTORS; INDIUM ALLOYS; LIGHT; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS;

FULL WIDTHS AT HALF MAXIMUMS; INJECTION CURRENTS; LOW PRESSURES; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; OUTPUT POWER; PEAK WAVELENGTH; PHOTOLUMINESCENCE WAVELENGTH; TRIMETHYLINDIUM; VIOLET LIGHT EMITTING DIODES;

SEMICONDUCTOR ALLOYS;

EID: 4444348461     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/9/048     Document Type: Article

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