Optical and electronic properties of InGaN/GaN multi-quantum-wells near-ultraviolet lighting-emitting-diodes grown by low-pressure metalorganic vapour phase epitaxy

Chinese Physics Letters

Volumn 20, Issue 8, 2003, Pages 1350-1352

  Li, Zhong Hui ^a   Yang, Zhi Jiam ^a   Qin, Zhi Xin ^a   Tong, Yu Zhen ^a   Yu, Tong Jun ^a   Lu, Shu ^a   Yang, Hua ^a   Zhang, Guo Yi ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; ENERGY GAP; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR QUANTUM WELLS;

DOUBLE CRYSTAL X-RAY DIFFRACTION; INGAN/GAN MULTI-QUANTUM WELL; LOW PRESSURE METAL ORGANIC VAPOR-PHASE EPITAXIES; LOW-PRESSURE METALORGANIC VAPOR PHASE EPITAXY; MULTIQUANTUM WELL STRUCTURES; NARROW FWHM; NEAR ULTRAVIOLET; OPTICAL AND ELECTRONIC PROPERTIES; SATELLITE PEAKS; SECOND ORDERS;

X RAY DIFFRACTION;

EID: 0041523873     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/8/349     Document Type: Article

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