AFM investigation of interface step structures on PVT-grown (0 0 0 1)Si 6H-SiC crystals

Journal of Crystal Growth

Volumn 270, Issue 1-2, 2004, Pages 113-120

  Herro, Z G ^a,b   Epelbaum, B M ^a   Weingartner R ^a   Bickermann, M ^a   Masri, P ^b   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

A1. Atomic force microscopy; A2. Growth from vapor; B1. Silicon carbide

Indexed keywords

DOPANTS; GROWTH FROM VAPORS; INTERFACE STEP STRUCTURES; SILICON CARBIDE CRYSTALS;

ABSORPTION; ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; COOLING; EPITAXIAL GROWTH; GRAIN BOUNDARIES; NITROGEN; SEMICONDUCTOR DOPING; THERMOANALYSIS;

SILICON CARBIDE;

EID: 4444301874     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.107     Document Type: Article

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