Effective Increase of Single-Crystalline Yield During PVT Growth of SiC by Tailoring of Radial Temperature Gradient

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 67-70

  Herro, Z ^a,b   Bickermann, M ^a   Epelbaum, B M ^a,c   Masri, P ^b   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c SICRYSTAL AG   (Germany)

Author keywords

Crystal Interface; Diameter Increase; Physical Vapor Transport; SiC Bulk Growth; Temperature Gradient

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; INTERFACES (MATERIALS); SINGLE CRYSTALS;

CRYSTAL QUALITY;

SILICON CARBIDE;

EID: 4444374073     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.67     Document Type: Conference Paper

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