Effect of thermal field on interface step structures during PVT growth of (0001 )Si 6H-SiC

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 95-98

  Herro, Z G ^a,b   Epelbaum, B M ^a,c   Bickermann, M ^a   Masri, P ^b   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b CNRS   (France)

^c SICRYSTAL AG   (Germany)

Author keywords

AFM; Nanosteps; SiC surface; Step structure; Thermal field

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DOPING (ADDITIVES); ION EXCHANGE; SURFACE ROUGHNESS; THERMAL EFFECTS;

DOPANTS; NANOSTEPS; SIC SURFACE; THERMAL FIELDS;

SILICON CARBIDE;

EID: 4444231745     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.95     Document Type: Conference Paper

References (11)

1. K. A. Jackson: J. Crystal Growth Vol. 24/25 (1974), p. 130.
2. Z. Herro, M. Bickermann, B. M. Epelbaum, P. Masri, A. Winnacker: Mater. Sci. Forum Vol. 433-436 (2003), p. 67.
3. Z.G. Herro, B.M. Epelbaum, M. Bickermann, P. Masri, and A. Winnacker: J. Crystal Growth, in Press
4. N. Ohtani, M. Katsuno, T. Aigo, T. Fujimoto, H. Tsuge, H. Yashiro, M. Kanaya: J. Crystal Growth Vol. 210 (2000), p. 613.
5. N. Sugiyama, A. Okamoto, K. Okumura, T. Tani, N. Kamiya: J. Crystal Growth Vol. 191 (1998), p. 84.
6. J.A. Lely: U. S. Patent no. 2,854,364 (1958).
7. D. Kandel, J. D. Weeks: Phys. Rev. B Vol. 49 (1994), p. 49.
8. V.V. Voronkov, L.N. Rashkovich: J. Crystal Growth Vol. 144 (1994), p. 107.
9. R.L. Schwoebel, E.J. Shipsey: J. Appl. Phys. Vol. 37 (1966), p. 3682.
10. T. Kimoto, A. Itoh and H. Matsunami: Appl. Phys. Lett. Vol. 66 (1995), p. 3645.
11. M. Bickermann, B.M. Epelbaum, D. Hofmann, T.L. Straubinger, R.Weingärtner, A. Winnacker: J. Crystal Growth Vol. 233 (2001), p. 211.