Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 526-230

  Scheiner, J ^a   Goldhahn, R ^a   Cimalla, V ^a   Ecke, G ^a   Attenberger, W ^b   Lindner, J K M ^b   Gobsch, G ^a   Pezoldt, J ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Cubic silicon carbide; Molecular beam epitaxy; Spectroscopic ellipsometry

Indexed keywords

CUBIC SILICON CARBIDE; SPECTROSCOPIC ELLIPSOMETRY;

APPROXIMATION THEORY; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; FILM GROWTH; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON WAFERS; SURFACE ROUGHNESS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0004139176     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(98)00466-8     Document Type: Article

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