Predictive study of thermodynamic properties of GeC

New Journal of Physics

Volumn 4, Issue , 2002, Pages

  Sekkal, W ^a,b   Zaoui, A ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3042655192     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/4/1/309     Document Type: Article

References (43)

1. Gavrilenko V I, Postnikov A V, Klyui N I and Litovchenko V G 1990 Phys. Status Solidi b 162 447
2. Bates W H, Bobbert P A and Van Haeringen W 1994 Phys. Rev. B 49 7564
3. Park C H, Cheong B-H, Lee K-H and Chang K J 1994 Phys. Rev. B 49 4485
4. Karch K, Wellenhofer G, Pavone P, Rößler U and Strauch D 1994 Structural and Electronic Properties of SiC Polytypes: Proc. 22nd Int. Conf. on the Physics of Semiconductors (Vancouver) ed D T Lockwood (Singapore: World Scientific)
5. Lambrecht W R L, Segall B, Methfessel M and Van Schilfgaarde M 1991 Phys. Rev. B 44 3685
6. Gavrilenko V I, Frolov S I and Klyui N I 1993 Physica B 185 394
7. Chang K J and Cohen M L 1987 Phys. Rev. B 35 8196
8. Cheong B H, Chang K J and Cohen M L 1991 Phys. Rev. B 44 1053
9. Tang Meijie and Yip S 1995 Phys. Rev. B 52 15 150
10. Martins J L and Zunger A 1986 Phys. Rev. Lett. 56 1400
11. Dünweg B and Landau D P 1992 Phys. Rev. B 48 14 182
12. Sankey O F, Demkov A A, Petuskey W T and McMillan P F 1993 Modelling Simul. Mater. Sci. Eng. 1 741
13. Morimoto A, Kataoko T, Kumeda M and Shimizu T 1984 Phil. Mag. B 50 517
14. White S B and McKenzie D R 1990 J. Appl. Phys. 68 3195
15. Battezzati L, Demichelis F, Pirri C F and Tresso E 1991 J. Appl. Phys. 69 2029
16. Tersoff J 1989 Phys. Rev. B 39 5566
17. Tersoff J 1988 Phys. Rev. Lett. 61 2879
18. Tersoff J 1988 Phys. Rev. B 37 6991
19. Yonezawa F (ed) 1992 Molecular Dynamics Simulations: Proc. Int. Taniguchi Symp. (Berlin: Springer) pp 235-48
20. Rahman A 1964 Phys. Rev. A 136 405
21. Verlet L 1967 Phys. Rev. 159 98
22. Sabochick M J and Lam N Q 1991 Phys. Rev. B 43 5243
23. Phillpot S R, Lutsko J F, Wolf D and Yip S 1989 Phys. Rev. B 40 2831
24. Gwan P, McKenzie D R and Pailthorpe B A 1996 J. Phys.: Condens. Matter 8 8753
25. Gibson J B, Goland A N, Milgram M and Vineyard G H 1960 Phys. Rev. 120 1229
26. Murnaghan F D 1944 Proc. Natl Acad. Sci. USA 30 5390
27. Verna A R and Krishna R 1966 Polymorphism and Polytypism in Crystals (New York: Wiley) p 103
28. Rücker H and Methfessel M 1995 Phys. Rev. B 52 11 059
29. Mehl M J 1993 Phys. Rev. B 47 2493
30. Lee D H and Joannopoulos J D 1982 Phys. Rev. Lett. 48 1846
31. Zhang S and Cohen M L 1987 Phys. Rev. B 35 7664
32. Sona T and Kagaya H M 1984 Solid State Commun. 50 1011
33. Chelikowsky J R 1986 Phys. Rev. B 34 5295
34. Vohra Y K, Weir S T and Ruoff A 1985 Phys. Rev. B 31 7344
35. Sekkal W, Aourag H and Certier M 1998 Comput. Mater. Sci. 9 295
36. Landolt-Börnstein New Series 1987 Group III, vol 22, ed O Madelung (Berlin: Springer)
37. Taylor A and Jones R M 1960 Silicon Carbide-A High Temperature Semiconductor ed J R O'Connor and J Smiltens (Oxford: Pergamon)
38. Karch K, Pavone P, Windl W, Strauch D and Bechstedt F 1995 Int. J. Quantum Chem. 56 801
39. Slack G A and Bartram S F 1975 J. Appl. Phys. 46 89
40. Sekkal W, Bouhafs B, Aourag H and Certier M 1998 J. Phys.: Condens. Matter 10 4975
41. Shah J S and Straumanis M E 1972 Solid State Commun. 10 159
42. Ibach H 1969 Phys. Status Solidi 31 625
43. Philip J and Breazeale M A 1983 J. Appl. Phys. 54 752