The physics of heteroepitaxy of 3C-SiC on Si: Role of Ge in the optimization of the 3C-SiC/Si heterointerface

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 535-538

  Masri, P ^a   Moreaud, N ^a   Rouhani Laridjani, M ^a   Calas, J ^a   Averous, M ^a   Chaix, G ^b   Dollet, A ^b   Berjoan, R ^b   Dupuy, C ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

Elasticity theory; Misfit related defects; Semiconductor interfaces; Theory

Indexed keywords

DISLOCATIONS (CRYSTALS); ELASTICITY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM; SILICON CARBIDE; SILICON WAFERS;

HETEROEPITAXY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032682972     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00468-1     Document Type: Article

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