-
1
-
-
0029712177
-
Process and design for ESD robustness in deep submicron CMOS technology
-
C. Jiang, E. Nowak, and M. Manley, "Process and design for ESD robustness in deep submicron CMOS technology," in Proc. IEEE Int. Reliability Physics Syrup., 1996, pp. 233-236.
-
(1996)
Proc. IEEE Int. Reliability Physics Symp.
, pp. 233-236
-
-
Jiang, C.1
Nowak, E.2
Manley, M.3
-
2
-
-
0030242764
-
Capacitor-couple ESD protection circuit for deep-submicron low-voltage CMOS ASIC
-
Sept
-
M.-D. Ker, C.-Y. Wu, T. Cheng, and H.-H. Chang, "Capacitor-couple ESD protection circuit for deep-submicron low-voltage CMOS ASIC" IEEE Trans. VLSI Syst., vol. 4, pp. 307-321, Sept. 1996.
-
(1996)
IEEE Trans. VLSI Syst.
, vol.4
, pp. 307-321
-
-
Ker, M.-D.1
Wu, C.-Y.2
Cheng, T.3
Chang, H.-H.4
-
3
-
-
0032306570
-
Design methodology and optimization of gate-driven NMOS ESD protection circuits in submicron CMOS processes
-
Dec
-
J. Chen, A. Amerasekera, and C. Duvvury, "Design methodology and optimization of gate-driven NMOS ESD protection circuits in submicron CMOS processes," IEEE Trans. Electron Devices, vol. 45, pp. 2448-2456, Dec. 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 2448-2456
-
-
Chen, J.1
Amerasekera, A.2
Duvvury, C.3
-
4
-
-
0031641250
-
Novel input ESD protection circuit with substrate-triggering technique in a 0.25-/μm shallow-trench- isolation CMOS technology
-
M.-D. Ker, T.-Y. Chen, C.-Y. Wu, H. Tang, K.-C. Su, and S.-W. Sun, "Novel input ESD protection circuit with substrate-triggering technique in a 0.25-/μm shallow-trench- isolation CMOS technology;" in Proc. IEEE Int. Symp. Circuits Systems, vol. 2, 1998, pp. 212-215.
-
(1998)
Proc. IEEE Int. Symp. Circuits Systems
, vol.2
, pp. 212-215
-
-
Ker, M.-D.1
Chen, T.-Y.2
Wu, C.-Y.3
Tang, H.4
Su, K.-C.5
Sun, S.-W.6
-
5
-
-
0034545734
-
Substrate pump NMOS for ESD protection applications
-
C. Duvvury, S. Ramaswamy, A. Amerasekera, and R. Cline, "Substrate pump NMOS for ESD protection applications," in Proc. EOS/ESD Symp., 2000, pp. 7-17.
-
(2000)
Proc. EOS/ESD Symp.
, pp. 7-17
-
-
Duvvury, C.1
Ramaswamy, S.2
Amerasekera, A.3
Cline, R.4
-
6
-
-
84888038303
-
ESD protection design in a 0.18-μm salicide CMOS technology by using substrate-triggered technique
-
M.-D. Ker, T.-Y. Chen, and C.-Y. Wu, "ESD protection design in a 0.18-μm salicide CMOS technology by using substrate-triggered technique," in Proc. IEEE Int. Syrup. Circuits Systems, 4, 2001, pp. 754-757.
-
(2001)
Proc. IEEE Int. Syrup. Circuits Systems
, vol.4
, pp. 754-757
-
-
Ker, M.-D.1
Chen, T.-Y.2
Wu, C.-Y.3
-
7
-
-
4444224921
-
-
Std. 22-A114-B, June
-
JEDEC Stand., Std. 22-A114-B, June 2000.
-
(2000)
JEDEC Stand.
-
-
-
8
-
-
4444343810
-
Standard test method for electrostatic discharge sensitivity testing - Human body model (HBM)
-
ESD Association, ESD Assoc., New York
-
ESD Association, "Standard test method for electrostatic discharge sensitivity testing - Human body model (HBM);" Component Level ESDSTM-5.1, ESD Assoc., New York, 1998.
-
(1998)
Component Level ESDSTM-5.1
-
-
-
9
-
-
0024122729
-
Internal chip ESD phenomena beyond the protection circuit
-
Dec
-
C. Duvvury, R. N. Rountree, and O. Adams, "Internal chip ESD phenomena beyond the protection circuit," IEEE Trans. Electron Devices, vol. 35, pp. 2133-2139, Dec. 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, pp. 2133-2139
-
-
Duvvury, C.1
Rountree, R.N.2
Adams, O.3
-
10
-
-
0027882751
-
Two unusual HBM ESD failure mechanisms on a mature CMOS process
-
C. C. Johnson, T. J. Maloney, and S. Qawami, "Two unusual HBM ESD failure mechanisms on a mature CMOS process;" in Proc. EOS/ESD Symp., 1993, pp. 225-231.
-
(1993)
Proc. EOS/ESD Symp.
, pp. 225-231
-
-
Johnson, C.C.1
Maloney, T.J.2
Qawami, S.3
-
11
-
-
0030273995
-
ESD protection to overcome internal gateoxide damage on digital-analog interface of mixed-mode CMOS ICs
-
M.-D. Ker and T.-L. Yu, "ESD protection to overcome internal gateoxide damage on digital-analog interface of mixed-mode CMOS ICs," Microelectron. Rel., vol. 36, pp. 1727-1730, 1996.
-
(1996)
Microelectron. Rel.
, vol.36
, pp. 1727-1730
-
-
Ker, M.-D.1
Yu, T.-L.2
-
12
-
-
0031371986
-
Unique ESD failure mechanisms during negative to VCC HBM tests
-
M. Chaine, S. Smith, and A. Bui, "Unique ESD failure mechanisms during negative to VCC HBM tests," in Proc. EOS/ESD Symp., 1997, pp. 346-355.
-
(1997)
Proc. EOS/ESD Symp.
, pp. 346-355
-
-
Chaine, M.1
Smith, S.2
Bui, A.3
-
13
-
-
0032309922
-
A simulation study of HBM failure in an internal clock buffer and the design issues for efficient power pin protection strategy
-
V. Puvvada and C. Duvvury, "A simulation study of HBM failure in an internal clock buffer and the design issues for efficient power pin protection strategy," in Proc. EOS/ESD Symp., 1998, pp. 104-110.
-
(1998)
Proc. EOS/ESD Symp.
, pp. 104-110
-
-
Puvvada, V.1
Duvvury, C.2
-
14
-
-
0028754968
-
Mixed-voltage interface ESD protection circuits for advanced microprocessors in shallow trench and LOCOS isolation CMOS technologies
-
S. Voldman and G. Gerosa, "Mixed-voltage interface ESD protection circuits for advanced microprocessors in shallow trench and LOCOS isolation CMOS technologies," in Tech. Dig. Int. Electron Devices Meeting, 194, pp. 277-280.
-
(1994)
Tech. Dig. Int. Electron Devices Meeting
, pp. 277-280
-
-
Voldman, S.1
Gerosa, G.2
-
15
-
-
0029326677
-
ESD protection in a mixed-voltage interface and multirail disconnected power grid environment in 0.50- and 0.25-μm channel length CMOS technologies
-
June
-
S. Voldman, "ESD protection in a mixed-voltage interface and multirail disconnected power grid environment in 0.50- and 0.25-μm channel length CMOS technologies," IEEE Trans. Comp., Packag., Manufact. Technol. A, vol. 18, pp. 303-313, June 1995.
-
(1995)
IEEE Trans. Comp., Packag., Manufact. Technol. A
, vol.18
, pp. 303-313
-
-
Voldman, S.1
-
16
-
-
0042698715
-
ESD protection design to overcome internal damage on interface circuits of CMOS IC with multiple separated power pins
-
M.-D. Ker, C.-Y. Chang, and Y.-S. Chang, "ESD protection design to overcome internal damage on interface circuits of CMOS IC with multiple separated power pins," in Proc. IEEE Int. ASIC/SOC Conf., 2002, pp. 234-238.
-
(2002)
Proc. IEEE Int. ASIC/SOC Conf.
, pp. 234-238
-
-
Ker, M.-D.1
Chang, C.-Y.2
Chang, Y.-S.3
-
18
-
-
0026820351
-
Improving the ESD failure threshold of silicided n-MOS output transistors by ensuring uniform current flow
-
Feb
-
T. L. Polgreen and A. Chatterjee, "Improving the ESD failure threshold of silicided n-MOS output transistors by ensuring uniform current flow," IEEE Trans. Electron Devices, vol. 39, pp. 379-388, Feb. 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, pp. 379-388
-
-
Polgreen, T.L.1
Chatterjee, A.2
-
19
-
-
4444320061
-
ESD protection circuit for mixed mode integrated circuits with separated power pins
-
June
-
M.-D. Ker, "ESD protection circuit for mixed mode integrated circuits with separated power pins," U.S. Patent 6 075 686, June 2000.
-
(2000)
U.S. Patent 6 075 686
-
-
Ker, M.-D.1
-
20
-
-
4444250317
-
Whole-chip ESD protection for CMOS ICs using bidirectional SCRs
-
Jan
-
M.-D. Ker and H.-H. Chang, "Whole-chip ESD protection for CMOS ICs using bidirectional SCRs," USA Patent 6 01l 681, Jan. 2000.
-
(2000)
USA Patent 6 01l 681
-
-
Ker, M.-D.1
Chang, H.-H.2
-
21
-
-
0000344253
-
Design on the low-leakage diode string for using in the power-rail ESD clamp circuits in a 0.35-μm silicide CMOS process
-
Apr
-
M.-D. Ker and W.-Y. Lo, "Design on the low-leakage diode string for using in the power-rail ESD clamp circuits in a 0.35-μm silicide CMOS process," IEEE J. Solid-State Circuits, vol. 35, pp. 601-611, Apr.
-
(2000)
IEEE J. Solid-State Circuits
, vol.35
, pp. 601-611
-
-
Ker, M.-D.1
Lo, W.-Y.2
|