Design on the Low-Leakage Diode String for Using in the Power-Rail ESD Clamp Circuits in a 0.35-μm Silicide CMOS Process

IEEE Journal of Solid-State Circuits

Volumn 35, Issue 4, 2000, Pages 601-611

  Ker, Ming Dou ^a,b   Lo, Wen Yu ^a,c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c Silicon Integrated Systems group   (Taiwan)

Author keywords

Diode string; Electrostatic discharge (esd); Esd bus; Esd protection circuit; Latch up; Leakage current; SCR

Indexed keywords

EID: 0000344253     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.839920     Document Type: Article

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