High-Power Monolithic AlGaN/GaN HEMT Oscillator

IEEE Journal of Solid-State Circuits

Volumn 38, Issue 9, 2003, Pages 1457-1461

  Kaper, Valery S ^a   Tilak, Vinayak ^a,b   Kim, Hyungtak ^a   Vertiatchikh, Alexei V ^a   Thompson, Richard M ^a   Prunty, Thomas R ^a   Eastman, Lester F ^a   Shealy, James R ^a  

^a Department of Obstetrics Gynecology   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

AlGaN GaN HEMT; Microwave FET oscillator; MMIC oscillator

Indexed keywords

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; WAVEGUIDES;

LOW-POWER OSCILLATORS;

OSCILLATORS (ELECTRONIC);

EID: 0041779684     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2003.815934     Document Type: Conference Paper

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