Growth of silicon-doped and high quality, highly resistive GaN for FET applications

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 897-901

  Doverspike, K ^a   Wickenden, A E ^a   Binari, S C ^a   Gaskill, D K ^a   Freitas, J A ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; FIELD EFFECT TRANSISTORS; FILM GROWTH; MESFET DEVICES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THIN FILMS; TRANSCONDUCTANCE;

CAPPING LAYER; CHANNEL LAYER; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029766289     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)