Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process

Microelectronic Engineering

Volumn 85, Issue 5-6, 2008, Pages 814-817

  Yang, Haifang ^a   Jin, Aizi ^a   Luo, Qiang ^a   Li, Junjie ^a   Gu, Changzhi ^a   Cui, Zheng ^b  

^a INSTITUTE OF PHYSICS   (China)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

Electron beam lithography; HSQ PMMA bilayer resist; Negative tone lift off

Indexed keywords

MICROSTRUCTURE; PHOTORESISTS; POLYMETHYL METHACRYLATES; REACTIVE ION ETCHING;

HSQ/PMMA BILAYER RESIST; NEGATIVE TONE LIFT-OFF;

ELECTRON BEAM LITHOGRAPHY;

EID: 44349178093     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.01.006     Document Type: Article

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