A lift-off process for high resolution patterns using PMMA/LOR resist stack

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 278-281

  Chen, Yifang ^a   Peng, Kaiwu ^b   Cui, Zheng ^a  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (China)

Author keywords

Dissolution rate; Electron beam lithography; High resolution patterning; Lift off; LOR; Undercut length

Indexed keywords

CONTAMINATION; DISSOLUTION; ELECTRON BEAM LITHOGRAPHY; ETCHING; IONS; NITROGEN; POLYMETHYL METHACRYLATES;

DISSOLUTION RATE; HIGH RESOLUTION PATTERNING; LIFT-OFF RESIST (LOR); UNDERCUT LENGTH;

MICROELECTRONICS;

EID: 17344388742     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00111-X     Document Type: Conference Paper

References (3)

1. Chen Y., Macintyre D., Thomas S. J. Vac. Sci. Technol. B. 20:2002;2887.
2. Chen C.X., Hurditch R.J., Johnson D.W., Nawrocki D.J. Proc. SPIE. 4690:2002;262.
3. Lee Y.H., Zhou Z.H. J. Electrochem. Soc. 138:1991;2439.