Revealing of threading and misfit dislocations in partially relaxed InGaAs/GaAs heterostructures

Physica Status Solidi C: Conferences

Volumn 1, Issue 2, 2004, Pages 401-404

  Yastrubchak, Oksana ^a   Łusakowska, Elzbieta ^a   Morawski, Andrzej ^a   Demchuk, Oleg ^b   Wosiński, Tadeusz ^a  

^a INSTITUTE OF PHYSICS   (Poland)

^b INSTITUTE OF ORGANIC CHEMISTRY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; CRYSTALLOGRAPHY; ELECTROLUMINESCENCE; ELECTRONIC STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; INDIUM COMPOUNDS; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; SEMICONDUCTOR MATERIALS; SURFACE PHENOMENA; ULSI CIRCUITS; X RAY DIFFRACTION ANALYSIS;

CROSS-HATCH PATTERN; ETCH PIT DENSITY (EPD); MISFIT LOCATIONS; THREADING DISLOCATION;

DISLOCATIONS (CRYSTALS);

EID: 2342557268     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303954     Document Type: Conference Paper

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