Dislocation-related electronic states in partially strain-relaxed InGaAs/GaAs heterostructures grown by MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 8, 2007, Pages 3037-3042

  Gelczuk, L ^a   Dabrowska Szata M ^a   Jozwiak G ^a   Radziewicz, D ^a   Serafinczuk J ^a   Dluzewski P ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

) ELECTRONIC STATE; BEHAVIOUR ANALYSIS; CAPTURE KINETICS; CONCENTRATION PROFILES; DEEP LEVELS; DISLOCATION CORES; EXTENDED DEFECTS; HETEROSTRUCTURE INTERFACES; HETEROSTRUCTURES; INGAAS/GAAS; INTERNATIONAL CONFERENCES; LINE SHAPES; MISFIT DISLOCATIONS; STRAIN-RELAXED;

CONCENTRATION (PROCESS); CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; EXPLOSIVE ACTUATED DEVICES; SEMICONDUCTOR MATERIALS;

HETEROJUNCTIONS;

EID: 38749129551     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200675467     Document Type: Conference Paper

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