Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures

Physica B: Condensed Matter

Volumn 388, Issue 1-2, 2007, Pages 195-199

  Gelczuk, L ^a   Dabrowska Szata, M ^a   Jozwiak G ^a   Radziewicz, D ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Deep levels; Dislocations; DLTS; Electronic states; Indium gallium arsenide

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; EPITAXIAL GROWTH; REACTION KINETICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

DEEP LEVELS; ELECTRONIC STATES;

HETEROJUNCTIONS;

EID: 33751218924     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2006.05.426     Document Type: Article

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