Full three-dimensional characterization of 25 nm lines for chemically amplified resist simulation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 2733-2737

  Landis, S ^a   Pauliac, S ^a   Foucher, J ^a   Thiault, J ^a,b   De Crecy, F ^a  

^a CEA LETI   (France)

^b Joseph Fourier University   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; MICROELECTRONICS; MOLECULAR WEIGHT; REACTION KINETICS; THERMAL EFFECTS; THREE DIMENSIONAL;

REACTION LAWS; REACTION ORDER; RESIST SIMULATION; THREE-DIMENSIONAL MEASUREMENTS;

PRINTED CIRCUITS;

EID: 29044443897     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2132327     Document Type: Article

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