Carbon hard masks for etching sub-90 nm structures

Microelectronic Engineering

Volumn 81, Issue 1, 2005, Pages 156-161

  Pears, Kevin A ^a   Stavrev, Momtchil ^a   Scire, Alessia ^a   Koepe, Ralf ^a   Markert, Matthias ^a   Egger, Ulrich ^a   Donohue, Lee ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Carbon; Hard masks; ICP; Metal; Nitride; Oxide; RIE

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; ETCHING; INDUCTIVELY COUPLED PLASMA; MASKS; NITRIDES; OXIDES; POLYSILICON;

CARBON HARD MASKS; REACTIVE ION ETCHING (RIE); SHALLOW TRENCH ISOLATION (STI); STRIATION;

CARBON;

EID: 21644486287     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.05.002     Document Type: Article

References (2)

1. M. Stavrev, A. Scire, M. Vogt, P. Klingbeil, C. Liao, S. Gruss, H-G. Froehlich, K. Mothes, L. Bauch, S. Wege, N. Thyssen. in: Proceedings of the ASMC (IEEE-SEMI), Boston Mass., USA, May 4-6, 2004, p. 84.
2. K.A. Pears, J. Stolze, Microelectron. Eng., 2004 (in press), doi:10.1016/j.mee.2005.02.002.