A new etching chemistry for carbon hard mask structures

Microelectronic Engineering

Volumn 77, Issue 3-4, 2005, Pages 255-262

  Pears, Kevin A ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Carbon etch; Dual frequency RIE; Hard masks; Methane; Nitrogen; Oxygen

Indexed keywords

AMORPHOUS FILMS; DEPOSITION; INDUCTIVELY COUPLED PLASMA; LITHOGRAPHY; MAGNETIC FIELDS; MASKS; METHANE; NITROGEN; OXYGEN; POLYMERIZATION; POLYMERS; REACTIVE ION ETCHING; SPUTTERING;

CARBON ETCH; CARBON HARD MASKS (CHM); DUAL FREQUENCY REACTIVE ION ETCHING; HARD MASK STRUCTURES;

CARBON;

EID: 15344344522     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.11.010     Document Type: Article

References (7)

1. M. Markert, Private communication, 2003
2. B. Haussdoerfer, M. Stavrev, A. Scire, Applied Materials Technical Conference, 2004
3. J. Stolze, K. Pears, Applied Materials Technical Conference, 2004
4. C. Whelan, T. Kazior, and K. Hur J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 15 5 1997 1728 1732
5. M. Stavrev, A. Scire, M. Vogt, P. Klingbeil, C. Liao, S. Gruss, H-G. Froehlich, K. Mothes, L. Bauch, S. Wege, N. Thyssen, Proc.ASMC (IEEE-SEMI), Boston, Mass, USA, May 4-6, 2004, p. 84
6. V. Jaiprakash, and B. Thompson J. Vac. Sci. Technol. A 12 4 1994 1403
7. S. Manolache, M. Sarfaty, and F. Denes Plasma Sources Sci. Technol. 9 2000 37