The CiCs(SiI) defect in silicon: An infrared spectroscopy study

Journal of Applied Physics

Volumn 100, Issue 3, 2006, Pages

  Potsidi, M S ^a   Londos, C A ^a  

^a UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARBON; CRYSTAL DEFECTS; INFRARED SPECTROSCOPY; IRRADIATION; NATURAL FREQUENCIES; NEUTRONS; SURFACE STRUCTURE; THERMOANALYSIS;

SECOND ORDER KINETICS; SILICON MATERIAL; STRUCTURE MODEL; VIBRATIONAL MODE FREQUENCIES;

SILICON;

EID: 33747491425     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2227634     Document Type: Article

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